Tungsten Forms In Different Condition
【Chinatungsten Online News Net- Tungsten News】
Tungsten nitride films were deposited from metallic tungsten target using reactive pulsed d. c. magnetron sputtering. The films were annealed in air at different temperatures for 1 h. The structural, electrical resistivity and optical properties of the annealed films were analyzed. Besides the film analysis, powder of tungsten nitride was obtained by scratching the coating from the glass substrates. The oxidation kinetics of the scratched powder was studied using simultaneous thermal gravimetric/deferential thermal analysis measurements. X-ray diffraction patterns revealed that W2N oxidizes to the two different phases WO3 and WO2.92. The oxide diffraction peaks appeared upon annealing at 773 K and the relative intensities increased with annealing temperature. The tungsten nitride was found to oxidize according a parabolic relation between mass gain and oxidation time. The activation energy of oxidation was evaluated by analyzing the Arrhenius relation from the temperature dependence of the weight gain. The obtained value was 1.76 eV. The activation energies of crystallization of the two phases were calculated. The electrical resistivity was found to increase drastically upon oxidation. The optical properties of the films are very sensitive to the oxidation temperature. The optical band gap values for the film oxidized at 773 K and 823 K are 2.71 and 2.58 eV, respectively.
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